| 摘要 |
PROBLEM TO BE SOLVED: To decrease the concentration of metal elements in a crystalline silicon film, for which the metal element for promoting the crystallization of silicon is utilized. SOLUTION: After a nickel element is led into an amorphous silicon film 103, first heating treatment for crystallization is executed. After a crystalline silicon film 105 is obtained, the heating treatment is executed again with the same heating method as first heating treatment. At such a time, HCl or the like is added into an atmosphere and gettering of the nickel element residual in the crystalline silicon film 105 is executed. Thus, the crystalline silicon film 105 having the low concentration of metal elements and high crystallinity can be provided. While using the crystalline silicon film provided like this, a semiconductor device is produced.
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