SEMICONDUCTOR MEMORY AND ITS CONTROL METHOD

摘要

PROBLEM TO BE SOLVED: To keep a bias potential supplied to a bias circuit which is provided in a read-out circuit section always constant. SOLUTION: This device is provided with a separation circuit 41 potentially separating a bit line BLL and a sense bit line BLS, a bias circuit 42 receiving constant bias potential VBIAS and setting a potential of a sense bit line LBS, without depending on a potential of a sense line SA, a load circuit 43 connected to a sense line SA, an amplifier circuit 44 enlarging potential amplitude in a bit line BLL, sensing data of a selected memory cell, and outputting it, a bit line initializing circuit 46 performing initial setting of a bit line BLL with a prescribed timing, a sense line initializing circuit 47 performing initial setting of a sense line SA with a prescribed timing, and a bias potential generating circuit 48 generating a bias potential VBIAS.