发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce occurrences of poor plating by preventing separation of resist, when forming an extension pad on a semiconductor chip by plating through the use of thick resist as a mask. SOLUTION: When forming an extension gold pad 11 on a semiconductor chip 12 by plating through the use of a resist pattern as a mask, a pattern is formed, so that no sharp notches are produced along the edge of a resist pattern. By using this resist pattern as a mask, when selectively applying gold plating to the semiconductor chip 12, the extension gold pad 11 having no sharp notches is formed. Instead of the extension gold pad, an on-chip antenna pattern can be formed through plating. This enables stable gold plating without the problem of separation, since no stress concentration will occur, even when the resist becomes thicker due to no sharp notches existing along the edge of the resist pattern.
申请公布号 JP2001144135(A) 申请公布日期 2001.05.25
申请号 JP19990327584 申请日期 1999.11.18
申请人 HITACHI LTD 发明人 USAMI MITSUO
分类号 H01L23/52;H01L21/3205;H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L23/52
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