SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device and its manufacturing method that suppress function of Vt and have an MOSFET, for preventing degree of integration from being reduced. SOLUTION: In a MOSFET provided in an element region being divided by a trench element separation region 2 formed on a P-type silicon substrate 1, the center part of a channel region 10 is set to a P--channel region 11 of low Vt, and each of both end parts near the boundary to the trench element separation region 2 is set to a P+-channel region 12 of high Vt.