发明名称 LASER DEVICE, LASER ANNEALING METHOD AND PRODUCING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a laser device and a laser annealing method, with which the crystalline semiconductor film of great crystal particle size can be provided and the running cost is reduced. SOLUTION: The fixed laser of easy maintenance and high durability is used as a laser and further made into linear laser light and throughput is improved so that the production cost is reduced as a whole. Further, by irradiating the front and back of an amorphous semiconductor film with such laser light, the crystalline semiconductor film of great crystal particle size is provided.</p>
申请公布号 JP2001144027(A) 申请公布日期 2001.05.25
申请号 JP20000243525 申请日期 2000.08.11
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;OTANI HISASHI;TANAKA KOICHIRO;KASAHARA KENJI;KAWASAKI RITSUKO
分类号 G02F1/136;G02F1/1368;H01L21/20;H01L21/268;H01L21/336;H01L29/786;H01S3/00;(IPC1-7):H01L21/268 主分类号 G02F1/136
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