发明名称 |
LASER DEVICE, LASER ANNEALING METHOD AND PRODUCING METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a laser device and a laser annealing method, with which the crystalline semiconductor film of great crystal particle size can be provided and the running cost is reduced. SOLUTION: The fixed laser of easy maintenance and high durability is used as a laser and further made into linear laser light and throughput is improved so that the production cost is reduced as a whole. Further, by irradiating the front and back of an amorphous semiconductor film with such laser light, the crystalline semiconductor film of great crystal particle size is provided.</p> |
申请公布号 |
JP2001144027(A) |
申请公布日期 |
2001.05.25 |
申请号 |
JP20000243525 |
申请日期 |
2000.08.11 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;OTANI HISASHI;TANAKA KOICHIRO;KASAHARA KENJI;KAWASAKI RITSUKO |
分类号 |
G02F1/136;G02F1/1368;H01L21/20;H01L21/268;H01L21/336;H01L29/786;H01S3/00;(IPC1-7):H01L21/268 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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