| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of improving withstand voltage in a drain side and suppressing increase in capacitance between gate and source in the source side. SOLUTION: This semiconductor device 10 has a field plate 117a formed by horizontally protruding a gate electrode G by a prescribed length overlapped on a surface protective film 113, resulting in effectively improving withstand voltage and suppressing a gate lag. The gate electrode G, however, is not protruded horizontally on the surface protective film 113 in the source electrode side of the opening, resulting in suppressing on of increase in unnecessary capacitance and obtaining satisfactory high frequency and high output characteristics.
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