SEMICONDUCTOR CAPACITANCE ELEMENT AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To prevent generation of particles in a capacitance element by eliminating residue of a film formed on the upper electrode at the sidewall portion of the lower electrode circumference, which is generated when the upper electrode is formed. SOLUTION: This semiconductor capacitance element has a structure, where an upper electrode 104 is formed on a lower electrode 102 at the center thereof where is not overlapped on the peripheral portion of the lower electrode 102 and that a residue pattern 105 consisting of the upper electrode forming film is provided separated from the upper electrode 104 on the peripheral portion of the lower electrode 102, overlapping with the peripheral portion of the lower electrode 102.