| 摘要 |
PROBLEM TO BE SOLVED: To provide a producing method for semiconductor device, with which the deterioration of characteristics is prevented, and a semiconductor device. SOLUTION: In the case of heating a semi-insulated GaAs substrate 1 inside a reaction pipe and growing the compound of group III elements and group V elements on the GaAs substrate 1 with the method of vapor phase epitaxial growth, by leading oxygen into the reaction pipe just before growing a target epitaxial layer, a residual Si impurity, which can not be completely removed by sulfuric acid etching, is inactivated. As a result, a leak current between the GaAs substrate 1 and a buffer layer 2 is reduced and the deterioration of characteristics of the semiconductor device is prevented.
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