| 摘要 |
<p>A silicon wafer obtained by slicing a silicon single-crystal bar grown by a CZ method by doping or not doping nitrogen, wherein the entire surface of the silicon wafer is either one of an NV region, an NV region containing an OSF ring region and an OSF ring region, and its interstitial oxygen concentration is up to 14 ppma; and a production method thereof; and a method of evaluating a defective region in a silicon wafer; whereby providing a silicon wafer that can ensure a stable oxygen deposition without depending on a crystal position and a device process, and a production method thereof. It is also possible to evaluate a defective region in a silicon wafer where a lifting condition is unknown and a defective region is not identified.</p> |
