发明名称 |
A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se2 |
摘要 |
<p>A two-stage method of producing thin-films of group IB-IIIA-VIA on a substrate for semiconductor device applications includes a first stage of depositing an amorphous group IB-IIIA-VIA precursor onto an unheated substrate, wherein the precursor contains all of the group IB and group IIIA constituents of the semiconductor thin-film to be produced in the stoichiometric amounts desired for the final product, and a second stage which involves subjecting the precursor to a short thermal treatment at 420 DEG C-550 DEG C in a vacuum or under an inert atmosphere to produce a single-phase, group IB-IIIA-VIA film. Preferably the precursor also comprises the group VIA element in the stoichiometric amount desired for the final semiconductor thin-film. The group IB-IIIA-VIA semiconductor films may be, for example, Cu(In,Ga)(Se,S)2 mixed-metal chalcogenides. The resultant supported group IB-IIIA-VIA semiconductor film is suitable for use in photovoltaic applications.</p> |
申请公布号 |
WO0137324(A1) |
申请公布日期 |
2001.05.25 |
申请号 |
WO2000US30673 |
申请日期 |
2000.11.08 |
申请人 |
MIDWEST RESEARCH INSTITUTE |
发明人 |
BECK, MARKUS, E.;NOUFI, ROMMEL |
分类号 |
H01L31/032;H01L31/0336;(IPC1-7):H01L21/00;H01L31/00 |
主分类号 |
H01L31/032 |
代理机构 |
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