| 摘要 |
PROBLEM TO BE SOLVED: To eliminate factors that deteriorate laser characteristics and productivity of a two-wavelength semiconductor laser device by etching and embedding growth. SOLUTION: On an n-type GaAs substrate 1, an n-type AlGaAs clad layer 2, an AlGaAs multiple quantum well active layer 3, a p-type cladding layer 4 are formed sequentially, and then current block regions 5 are formed on parts of the p-type cladding layer 4 to form infrared laser structures 21. Regions containing two light-emitting regions are removed, to form recessed regions 23 in parallel and at equal intervals. Red laser structures 22 are formed on the recessed regions by growing an n-type AlGaInP clad layer 7, an AlGaInP multiple quantum well active layer 8, and a p-type clad layer 9 in this order, again by means of a crystal growing method such as MOVPE method. After the infrared laser structures 21 and the red laser structures 22 are isolated, and n-side electrodes 12 and p-side electrodes 10 and 11 are formed, chip separation is made at each boundary between two light-emitting regions.
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