| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable method of manufacturing semiconductor devices and to provide the semiconductor devices. SOLUTION: In this method of manufacturing semiconductor devices, whose electrode forming surface on which electrodes 2 for connection to the outside is formed, are sealed with resin, a resin layer 3 having the function of sealing the electrode forming surface is formed on a semiconductor wafer 1, on which a plurality of semiconductor devices are formed. After the step of forming the resin layer 3, the rear of the semiconductor wafer 1 is ground mechanically for reducing its thickness. In this way, since the semiconductor wafer 1 is reinforced by the resin layer 3 when its thickness is reduced, a uniform reduction in thickness can be performed and no breakage or damage is produced at peeling of a protective sheet, since the protective sheet which was used previously is no longer necessary. Furthermore, since the semiconductor wafer 1 after reducing of its thickness is reinforced by the resin layer 3, damages due to external force at cutting (division) can be prevented. |
