| 摘要 |
1,273,150. Etching. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 24 Sept., 1969 [21 Oct., 1968], No. 49869/68. Heading B6J. A monocrystalline silicon body surface is etched through a mask consisting at least partly of aluminium using as etchant a solution comprising one of: hydrazine; ethylenediamine; 1, 2 propylenediamine; 1, 3 propylenediamine; and 1, 6 hexanediamine; together with water. The mask may also comprise a layer of silica. The etching solution may also contain propanol as moderator. The etching may be performed on a (100) silicon crystal plane orientated surface. The aluminium and silica layers may subsequently form a part of a semi-conductor device made from the silicon body.
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