发明名称 |
A method concerning a junction barrier Schottky diode, such a diode and use thereof |
摘要 |
A method for controlling the temperature dependence of a junction barrier Schottky diode of a semiconductor material having an energy gap between the valence band and the conduction band exceeding 2 eV provides for doing this when producing the diode by adjusting the on-state resistance of the grid portion of the diode during the production for obtaining a temperature dependence of the operation of the diode adapted to the intended use thereof. |
申请公布号 |
SE0101848(D0) |
申请公布日期 |
2001.05.25 |
申请号 |
SE20010001848 |
申请日期 |
2001.05.25 |
申请人 |
ABB RESEARCH LTD |
发明人 |
FANNY *DAHLQVIST;HEINZ *LENDENMANN |
分类号 |
H01L21/28;H01L21/04;H01L29/24;H01L29/47;H01L29/872 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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