SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To further reduce MOSFET the on-state resistance. SOLUTION: A current, flowing through a channel region formed on a surface channel layer 5, is set so as to flow in a [11-20] direction. In this way, by having the direction of a current flowing through the channel region set as the direction of [11-20], where channel mobility becomes maximum, the channel resistance can be reduced, and a MOSFET can be further decreased in the on-state resistance.