| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory in which data 1 and data 0 are simultaneously written with respect to identical with storage cell in the same word, while rewriting stress is not given to a storage cell which required no rewriting. SOLUTION: A current path of a high potential Vpp is omitted by providing a MOSFET (SPT) functioning as a separation transistor in series as well as a MOSFET (SLT) functioning as a select-transistor, a MOSFET (MT) having a floating gate(FG) and functioning as a memory transistor in each unit of a semiconductor memory, and data 1 and data 0 are written simultaneously in each storage unit in the same word, by giving an intermediate potential of a high potential Vpp to a control line(CL).</p> |
