发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR THE SAME, AND ELECTRONIC DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a laser annealing method for providing a crystalline semiconductor film of large crystal particle size as well as the manufacturing method for a semiconductor device which uses it. SOLUTION: At crystallization of a non-crystalized semiconductor film under laser irradiation, the change in shape of the semiconductor film (a protruding part or recessed part) is used intentionally to specify the start point of crystal growth, for larger crystal particle size. An active layer (island-like semiconductor film) is arranged so that at least a channel formation region is accommodated inside one single crystal particle, for improved electric characteristics of a TFT.</p> |
申请公布号 |
JP2001144302(A) |
申请公布日期 |
2001.05.25 |
申请号 |
JP20000260550 |
申请日期 |
2000.08.30 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
KAWASAKI RITSUKO;KASAHARA KENJI;YAMAZAKI SHUNPEI |
分类号 |
G02F1/136;G02F1/1368;G09F9/00;G09F9/30;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|