发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having improved element characteristics. SOLUTION: A gate insulating film bas a double-layer structure comprising a silicon oxide film and silicon nitride film, and a silicon oxide film contacting a semiconductor film is added with a small amount of fluorine for fixing sodium ions, resulting in improved element characteristics.</p> |
申请公布号 |
JP2001144304(A) |
申请公布日期 |
2001.05.25 |
申请号 |
JP20000304158 |
申请日期 |
2000.10.03 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;MASE AKIRA;HAMAYA TOSHIJI |
分类号 |
G02F1/136;G02F1/1368;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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