| 摘要 |
<p>PROBLEM TO BE SOLVED: To decrease the contact resistance of a semiconductor layer with a source electrode and a drain electrode, to improve the adhesion property and to prevent cutting in lines due to intrusion of a chemical liquid during etching a transparent conductive film. SOLUTION: A gate electrode 4, gate insulating film GI, A-Si layer 7 as a semiconductor layer, N(+)a-Si layer 8 as a contact layer and transparent conductive layer 11 are formed in this order on the inner face of an insulating substrate 1 (SUB1) which constitutes an active matrix substrate where a thin film transistor is formed, and a silicide layer 10 is inserted between the N(+)a-Si layer 8 and the transparent conductive layer 11.</p> |
