发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve efficiency in resistivity with respect to thermal fatigue even in the case of utilizing non-lead solder, and to suppress changes in resistivity of die-bonding part even if it is the die-bonding part is heated, when a semiconductor device is mounted on a printing substrate by means of solder. SOLUTION: In a manufacturing method of the semiconductor device, IC chip is die-bonded to a lead frame island by means of a solder material, and electrode connection and resin molding are performed. The solder material includes 0.005 to 5.0 wt.% ot at least either one of Fe or Ni, preferably 0.1 to 20 wt.% Ag, or 0.05 to 9 wt.% Cu, or 0.1 to 15 wt.% Ag and 0.05 to 5 wt.% Cu. Furthermore, it has 0.1 to 15 wt.% Sb and the rest of the contents is substantially Sn. The semiconductor device is heat treated at 150 to 200 deg.C after resin molding.
申请公布号 JP2001144111(A) 申请公布日期 2001.05.25
申请号 JP19990322543 申请日期 1999.11.12
申请人 TANAKA ELECTRONICS IND CO LTD 发明人 KOGASHIWA TOSHINORI;ARIKAWA TAKATOSHI;TEJIMA SATOSHI
分类号 H05K3/34;H01L21/52;(IPC1-7):H01L21/52 主分类号 H05K3/34
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