CIRCUIT CONFIGURATION FOR PROTECTING SEMI-CONDUCTOR CIRCUITS AGAINST POLARITY REVERSAL

摘要

The invention relates to a circuit configuration for protecting semi-conductor circuits against polarity reversal. Two quasi-vertical or vertical DMOS transistors (12, 14) which are integrated into a drift area (18) are provided to this end. A first DMOS transistor (12) is connected to a switching electrical consumer (42) and a second DMOS transistor (14) is anti-serially connected to said first DMOS transistor (12). The DMOS transistors (12, 14) have different levels of blocking resistance.