| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable further more rewriting contents data in an incorporated semiconductor flash memory. SOLUTION: Since the number of times of rewritings of a semiconductor flash memory 80 is not reduced by the number of times of rewriting of an FAT by writing digital music contents C1 in the semiconductor flash memory 80 and writing the FAT of which the number of times of rewriting is more than that of the digital music contents C1 in an EEPROM 72, the semiconductor flash memory 80 can be used effectively for only the rewrite of the digital music contents C1.</p> |
