| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, whereby if an antireflection film is removed by an etch back step, connection holes of adequate shapes can be formed by additionally forming a second antireflection film, to prevent the halation under question especially at wiring isolation regions before forming the connection holes. SOLUTION: A second antireflection film 11 is formed on a planarized layer insulation layer 7, a resist layer is formed on the second antireflection film 11, the exposure-development process is applied to the resist layer to form a second resist mask 8 having a desired opening pattern, and a laminate between the second resist mask 8 and a wiring layer 2 is etched to form connection holes 10a reaching the wiring layer 2, using the second resist mask 8 as a mask.
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