发明名称 CHECKING PATTERN FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To detect variations in a small through-hole (or contact) resistance with higher accuracy, without having to receive the influence of variation of wiring resistance and contact resistance between a measuring probe and electrode. SOLUTION: A circuit like a Wheatstone bridge is formed by preparing for four sets of the side of upper layer wiring (terminal) - through-hole - lower layer wiring - through-hole - upper layer wiring (terminal). The upper layer wiring and the lower layer wiring are designed so as to have identical resistance in the object shape between the terminals A-C, C-B, A-D and D-B. Regarding the through-hole connecting each terminal, the diameter and numbers are set identical for the through-hole groups 2, 3, 4 between the terminals C-B, A-D, D-B. The through-hole group 1 (1a, 1b) changes its diameter so as to result from the influence of process variation which is different from that of the through-hole groups 2 (2a, 2b), 3 (3a, 3b) and 4 (4a, 4b).
申请公布号 JP2001144253(A) 申请公布日期 2001.05.25
申请号 JP19990321941 申请日期 1999.11.12
申请人 NEC CORP 发明人 NISHIO SHINYA
分类号 H01L21/822;G01R31/02;H01L21/66;H01L23/544;H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L21/822
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