| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with sufficiently self- aligned local interconnector and a producing method for the same. SOLUTION: A wafer has a source region and a drain region, which are located while having an interval distance. The gate part is extended upward from a gap between adjacent couples in the said region into an insulator layer. In order to prepare a local interconnector for the said source region and the said drain region through the said insulator layer, etching is executed for preparing a pattern while using an etching region. The said etching region is extended from a position on one said region on one said gate part to a position on the other said region. Recessed parts are prepared in the opposite side of the said gate part and directly adjacently thereto by etching in this etching region. A conductor layer is deposited, and the said recessed part is filled and next flattened to the upper terminal part of the said gate part. |
