| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polycrystal semiconductor device for fast operation without impairing productivity. SOLUTION: There are provided a first channel region 15c, formed in a polycrystal semiconductor film 15 formed on an insulating substrate 10, and a second channel region 15c formed in the polycrystal semiconductor film 15. Here, the first channel region 15c comprises at least one grain boundary, while the second channel region 15c comprises substantially no grain boundary.</p> |
