| 摘要 |
PROBLEM TO BE SOLVED: To suppress electrical breakdown voltage deterioration at the contact part of a gate electrode and a diffusion region, without separately adding processes for removing an insulating film on the gate electrode. SOLUTION: This method for manufacturing semiconductor devices includes a process, where a third insulating film is provided on a gate electrode forming layer having a control gate silicon film in the top layer on a silicon substrate, a process where each film is etched until the silicon substrate is exposed for forming a gate electrode, at the same time, source and drain formation regions are opened, and the third insulating film is left, at least one end part of the gate electrode for removing for partially exposing the control gate silicon film, a process where a sidewall spacer is formed in the gate electrode and on the sidewall of the third insulating film being left on the gate electrode, and a process where a metal silicide layer is formed on the control gate silicon film being exposed by heat treatment and the silicon substrate.
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