LASER EQUIPMENT AND LASER ANNEALING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a laser annealing method for obtaining a crystalline semiconductor film wherein crystal grain diameter is large. SOLUTION: When an amorphous semiconductor film is crystallized by irradiation of a laser light, the laser light is cast on the surface and the back of the amorphous semiconductor film. In this case, relation of 0 Io'/Io<1 or,1 Io'/Io is maintained in the ratio (Io/Io) between effective energy intensity (Io) of a laser light cast on the surface and effective energy intensity (Io) of a laser light cast on the back.