| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, which has an insulation film substantially uniform in height on element isolation regions, a plurality of single crystal semiconductor layers which are different in film thickness, and a structure easy to do fine wiring process. SOLUTION: In a semiconductor device having integrated semiconductor elements having a plurality of SOI-Si layer thicknesses, its element isolation regions 13 are substantially uniform, with respect to their height from a semiconductor substrate surface. After forming the element isolation regions 13 uniform in height on the semiconductor substrate, a plurality of SOI-Si layers 14, 15 differing appropriately in height are formed, thereby obtaining the element isolation regions 13 uniform in height from the semiconductor substrate 11 and forming desired element regions different in SOI-Si layer thickness. To appropriately change the film thickness of a single-crystal Si film (SOI-Si layer), and moreover, an amorphous Si film is deposited and heat treated, to form an epitaxial layer and unwanted parts are removed.
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