| 摘要 |
PROBLEM TO BE SOLVED: To form a thick semiconductor layer through series of epitaxial growing processes. SOLUTION: In the epitaxial growth of the semiconductor layer on the surface of a semiconductor wafer W, after a molten semiconductor material M produced inside a crucible 2 is fed onto the semiconductor wafer W, a heater 3 for temperature difference formation separated above a treatment vessel 1 is moved down and contacted to the upper surface of the molten semiconductor material M. After the epitaxial growth of the semiconductor layer based on the method of temperature difference, the heater 3 for temperature difference formation is separated from the molten semiconductor material M, a heater 6 is controlled and gradual cooling of the semiconductor wafer W is started. Gallium phosphorus is further deposited on the surface of the semiconductor wafer W by this gradual cooling and the semiconductor layer of gallium phosphorus is epitaxially grown.
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