发明名称 CHEMICALLY SENSITIZED POSITIVE RESIST MATERIAL AND PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To form a minute contact hole pattern for the production of a very large scale integrated circuit as well as to provide a highly adaptable process in which the reduction of contact hole size by heating is easily controlled by adding a compound having, in one molecule, two or more functional groups which can crosslink with a polymer compound used in a chemically sensitized positive resist material in a step for reducing contact hole size by heating a contact hole pattern when the contact hole pattern is formed using the resist material. SOLUTION: The objective chemically sensitized positive resist material for forming a contact hole pattern by a thermal flow process contains a compound containing two or more functional groups of formulae (1)-a, (1)-b and (1)-c in one molecule. In the formulae, R1-R4 are each H or linear, branched or cyclic alkyl; R5-R9 are each linear, branched or cyclic alkyl; and adjacent symbols Rn may combine to each other to form a ring.
申请公布号 JP2001142199(A) 申请公布日期 2001.05.25
申请号 JP19990323332 申请日期 1999.11.12
申请人 SHIN ETSU CHEM CO LTD 发明人 TAKEMURA KATSUYA;KOIZUMI KENJI;KANEKO TATSUSHI;SAKURADA TOYOHISA
分类号 H01L21/027;G03F7/004;G03F7/039;G03F7/40 主分类号 H01L21/027
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