摘要 |
PROBLEM TO BE SOLVED: To form a minute contact hole pattern for the production of a very large scale integrated circuit as well as to provide a highly adaptable process in which the reduction of contact hole size by heating is easily controlled by adding a compound having, in one molecule, two or more functional groups which can crosslink with a polymer compound used in a chemically sensitized positive resist material in a step for reducing contact hole size by heating a contact hole pattern when the contact hole pattern is formed using the resist material. SOLUTION: The objective chemically sensitized positive resist material for forming a contact hole pattern by a thermal flow process contains a compound containing two or more functional groups of formulae (1)-a, (1)-b and (1)-c in one molecule. In the formulae, R1-R4 are each H or linear, branched or cyclic alkyl; R5-R9 are each linear, branched or cyclic alkyl; and adjacent symbols Rn may combine to each other to form a ring. |