发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor device having wiring for layer connection on the surface and rear of a substrate in which reliability of layer connection can be enhanced by designing the profile of wiring on the surface layer arbitrarily and a semiconductor element can be protected against damage. SOLUTION: The method for manufacturing a semiconductor device 1 comprises a step for mounting a semiconductor element 10 formed on the surface of a substrate 2', having wiring patterns 5, 6 connected through through holes 8 on the surface and rear where the thickness H of wiring on the surface is thicker than the thickness of wiring on the rear surface, upside down in a recess 9 shallower than the thickness of the semiconductor element 10, a step for sealing the semiconductor element in the recess with synthetic resin 11, and a step for grinding the substrate and the semiconductor element up to the surface wiring.
申请公布号 JP2001144218(A) 申请公布日期 2001.05.25
申请号 JP19990327400 申请日期 1999.11.17
申请人 SONY CORP 发明人 MURAYAMA TOSHIHIRO;KATO MASUO;TATENO YASUSHI
分类号 H01L23/12;H01L21/304;H01L23/24;H01L23/52;H01L25/065;H01L25/07;H01L25/10;H01L25/18 主分类号 H01L23/12
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