| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing solution for a metal and a method of polishing a substrate using the polishing solution for the metal, wherein superfluous layers of a buried film made of the metal, etc., can be removed and planarized efficiently, the process management can be performed easily, and a metallic film buried pattern can be formed highly reliably, in a recess CMP technology such as plug formation. SOLUTION: The polishing solution contains an agent for oxidizing a metal, an oxide metal dissolving agent, a protective film forming agent, a water-soluble polymer, and water, and has an inflection point of polishing pressure dependence on a polishing speed. When the polishing pressure is set to P, and if the effective polishing pressure for recesses of a patterned substrate is P1, and the effective polishing pressure for projections of an unpatterned substrate is P2, then the composition of the polishing solution is adjusted such that the pressure P' wherein the inflection point appears in its polishing velocity applied to the unpatterned substrate satisfies the inequality P1<P<P'<P2.
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