发明名称 STABILIZED OSCILLATOR CIRCUIT FOR PLASMA DENSITY MEASUREMENT
摘要 A method and system for controlling electron densities in a plasma processing system (105). By applying a dither voltage (117) and a correction voltage to a voltage-controller oscillator (101), electron density of an open resonator plasma processing system (105) may be measured and controlled as part of a plasma-based process.
申请公布号 WO0137306(A1) 申请公布日期 2001.05.25
申请号 WO2000US19540 申请日期 2000.07.20
申请人 TOKYO ELECTRON LIMITED;SIRKIS, MURRAY, D.;VERDEYEN, JOSEPH, T. 发明人 SIRKIS, MURRAY, D.;VERDEYEN, JOSEPH, T.
分类号 H01L21/3065;H05H1/00;H05H1/46;(IPC1-7):H01J7/24;H05B31/26 主分类号 H01L21/3065
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