METHOD FOR PRODUCING BONDING SOI WAFER AND BONDING SOI WAFER

摘要

PROBLEM TO BE SOLVED: To obtain an SOI wafer including a high quality SOI layer having excellent surface roughness and reduced crystal defect with high productivity, high production yield and low cost. SOLUTION: In the method for producing a bonding SOI wafer, a single crystal silicon rod is grown by Czochralski method and sliced to obtain a single crystal silicon wafer. The single crystal silicon wafer is heat treated at 1100-1300 deg.C for 1 min or longer in nonoxidizing atmosphere and further heat treated continuously at 700-1300 deg.C for 1 min or longer in oxidizing atmosphere without cooling down to 700 deg.C or below to produce a single crystal silicon wafer having a silicon oxide film formed on the surface which is then employed as a bond wafer for forming a bonding SOI wafer. A bonding SOI wafer produced by that method is also include in the invention.