| 摘要 |
PROBLEM TO BE SOLVED: To reduce production cost of an SOI substrate while preventing production yield from lowering in the way of a process due to generation of particles. SOLUTION: Two sheets of wafers are bonded through an oxide film 3 such that the major faces of a base wafer 1 and a bond wafer 2 face each other. Following to the bonding process, end parts of the bonded wafer are subjected to beveling. Rear surface of the bonded wafer 4 on the bond wafer 2 side is then subjected to surface grinding and mirror polishing to obtain an SOI layer of specified thickness. Since beveling is carried out after finishing heat treatment for bonding, conventionally required edge grinding or masking taping or alkaline etching process can be eliminated and production cost of a SOI wafer can be reduced. Furthermore, conventionally inevitable terrace structure can be eliminated and production yield can be prevented from lowering by suppressing generation of particles in the way of process due to stripping of a deposited film from the terrace part.
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