发明名称 |
Laser comprising stacked laser diodes produced by epitaxial growth inserted between two bragg mirrors |
摘要 |
A laser made of a stack of laser diodes. The stack is inserted between two mirrors to create a laser cavity. The stack of diodes is produced by epitaxial growth of a set of semiconductor layers. The ohmic contact between two adjacent laser diodes is provided by an Esaki diode junction. The optical field of the mode created in the laser cavity is periodically cancelled at the Esaki diode junctions so as to create structures with small dimensions.
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申请公布号 |
US6236670(B1) |
申请公布日期 |
2001.05.22 |
申请号 |
US19980147312 |
申请日期 |
1998.11.25 |
申请人 |
THOMSON-CSF |
发明人 |
NAGLE JULIEN;ROSENCHER EMMANUEL |
分类号 |
H01S5/042;H01S5/183;H01S5/20;H01S5/40;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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