METHOD FOR DEPOSITING METALLIC THIN FILM

摘要

PROBLEM TO BE SOLVED: To deposit a metallic layer brought into ohmic contact with a semiconductor substrate more easily and inexpensively compared to the case of a method by vapor deposition. SOLUTION: A low melting point metal having the melting point of <=350 deg.C is fused and is applied on a rotating semiconductor substrate to deposit a metallic thin film on the face of the semiconductor substrate.