发明名称 |
Seed metal delete process for thin film repair solutions using direct UV laser |
摘要 |
A multilayer thin film structure (MLTF) is provided having no extraneous via-pad connection strap plated metallurgy for defective vias needing removal. The method for making or repairing the MLTF comprises determining interconnection defects in the MLTF at a thin film layer adjacent to the top metal layer of the structure, applying a top surface dielectric layer and forming vias in the layer, applying a metal conducting layer and removing the metal conducting layer for via-pad connection straps of defective vias and at the intersection of XY lines used in the repair, defining the top surface metallization including a series of orthogonal X conductor repair lines and Y conductor repair lines using a photoresist and lithography and then using a phototool to selectively expose the photoresist to define top surface strap connections needed to repair the interconnections and/or make EC's, and forming the top surface metallization using additive or subtractive metallization techniques.
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申请公布号 |
US6235544(B1) |
申请公布日期 |
2001.05.22 |
申请号 |
US19990295131 |
申请日期 |
1999.04.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FRANKLIN PETER A.;HENDRICKS CHARLES J.;SURPRENANT RICHARD P.;TIRCH, III STEPHEN J.;WASSICK THOMAS A.;WOOD JAMES P. |
分类号 |
H01L21/48;(IPC1-7):G01R31/26 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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