发明名称 Seed metal delete process for thin film repair solutions using direct UV laser
摘要 A multilayer thin film structure (MLTF) is provided having no extraneous via-pad connection strap plated metallurgy for defective vias needing removal. The method for making or repairing the MLTF comprises determining interconnection defects in the MLTF at a thin film layer adjacent to the top metal layer of the structure, applying a top surface dielectric layer and forming vias in the layer, applying a metal conducting layer and removing the metal conducting layer for via-pad connection straps of defective vias and at the intersection of XY lines used in the repair, defining the top surface metallization including a series of orthogonal X conductor repair lines and Y conductor repair lines using a photoresist and lithography and then using a phototool to selectively expose the photoresist to define top surface strap connections needed to repair the interconnections and/or make EC's, and forming the top surface metallization using additive or subtractive metallization techniques.
申请公布号 US6235544(B1) 申请公布日期 2001.05.22
申请号 US19990295131 申请日期 1999.04.20
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FRANKLIN PETER A.;HENDRICKS CHARLES J.;SURPRENANT RICHARD P.;TIRCH, III STEPHEN J.;WASSICK THOMAS A.;WOOD JAMES P.
分类号 H01L21/48;(IPC1-7):G01R31/26 主分类号 H01L21/48
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