发明名称 |
Semiconductor integrated circuit device having double diffusion insulated gate field effect transistor |
摘要 |
To provide a lateral double diffusion insulated gate field effect transistor with high driving current and low source-drain withstand voltage without receiving the influence of process fluctuation. Without shortening a gate electrode 10 as compared with conventional one, an impurity of the same conductivity type as a drain is ion-implanted from the side of a high concentration drain region 20 by using the gate electrode as a mask in a self-aligning manner. The amount of impurity implantation is set as higher than the concentration of a semiconductor substrate 19.
|
申请公布号 |
US6236084(B1) |
申请公布日期 |
2001.05.22 |
申请号 |
US19990320111 |
申请日期 |
1999.05.26 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
HARADA HIROFUMI;OSANAI JUN |
分类号 |
H01L21/336;H01L21/8238;H01L21/8249;H01L27/092;H01L29/08;H01L29/78;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|