| 摘要 |
PROBLEM TO BE SOLVED: To increase the ratio of the sputtering ionization of a non-SSS material and thereby to promote the filling of a deep hole by a pedestal of an external bias or a self-bias. SOLUTION: A plasma sputtering reactor 10 is composed for the continuous self-sputtering or low pressure sputtering of copper in particular, a pedestal 16 supporting a wafer 18 to be sputter-deposited includes back face cooling or heating via heat transfer gas, and the heat transfer gas is composed of helium. Argon is fed, and plasma is started. The argon may moreover be fed in the process of low pressure sputtering.
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