| 摘要 |
PROBLEM TO BE SOLVED: To reduce current consumption by providing precharge operation inhibition control applicable to a memory for display. SOLUTION: This semiconductor memory is provided with a control cell 1, with which each of display RAM columns holds precharge control information for inhibiting or permitting the operation of precharge and outputs an inhibit signal NE corresponding to this precharge control information, an OR gate 4 for outputting a precharge signal CP by invalidating or validating a precharge control signal HPC from the outside on the basis of the value of the read inhibit signal NE, and a PMOS transistor P1 for precharging an output bit line 6, in response to the supply of the precharge signal CP. Based on the precharge control information, the precharge operation of a nonuse display RAM column is inhibited.
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