发明名称 Method of fabricating shallow trench isolation
摘要 A method for fabricating a shallow trench isolation. A pad oxide layer and a mask layer are formed over a substrate. The pad oxide layer, the mask layer, and the substrate are patterned to form a trench exposing a portion of the substrate. A liner oxide layer is formed on the substrate exposed by the trench. An isolation layer is formed over the substrate to cover the liner oxide layer. The isolation layer is conformal to the trench. An oxide layer is formed over the substrate to fill the trench. A portion of the oxide layer and the isolation layer is removed until the mask layer is exposed. The mask layer and the pad oxide layer are removed to form a shallow trench isolation.
申请公布号 US6235606(B1) 申请公布日期 2001.05.22
申请号 US19990225031 申请日期 1999.01.04
申请人 UNITED MICROELECTRONICS CORP. 发明人 HUANG MICHAEL W C;HUANG KUO-TAI;LU HSIAO-LING;YEW TRI-RUNG
分类号 H01L21/60;H01L21/762;(IPC1-7):H01L21/76 主分类号 H01L21/60
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