发明名称 |
METHOD FOR MANUFACTURING OXIDE FILM AND METHOD FOR MANUFACTURING FERROELECTRIC MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To enable hybrid packaging of highly functional logic and ferroelectric memory without entailing the fluctuation in the characteristics of a semiconductor integrated circuit and the deterioration in the characteristics by providing a method for manufacture which is capable of forming an oxide film and more particularly the ferroelectric oxide film of the ferroelectric memory. SOLUTION: The results obtained by carrying out X-ray diffraction measurement while raising a substrate temperature within a gaseous mixture composed of H2 and N2 of 4% in H2 concentration relating to a PZST amorphous film subjected to RR sputtering at a substrate temperature of about 300 deg.C are shown in Figure. It is shown that the peak of a perovskite phase is gradually stronger from about the point exceeding 300 deg.C. The acute peak of perovskite is observed at >=400 deg.C. Namely, the perovskite film exhibiting ferroelectricity at a low temperature of <=450 deg.C is evidenced to be obtained by carrying out the heat treatment in a reducing atmosphere. Such technique is applied to the ferroelectric film formation of the ferroelectric memory.
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申请公布号 |
JP2001139313(A) |
申请公布日期 |
2001.05.22 |
申请号 |
JP19990320452 |
申请日期 |
1999.11.11 |
申请人 |
NEC CORP |
发明人 |
INOUE HISAYA;HAYASHI YOSHIHIRO;SENNA TAMOTSU;ISOBE TETSUHIKO;NAITO KOHEI |
分类号 |
H01L21/316;C01B13/14;C01G25/00;C01G33/00;C23C14/58;C30B29/32;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;(IPC1-7):C01B13/14;H01L21/824 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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