发明名称 |
Semiconductor crystallization on composite polymer substrates |
摘要 |
A structure and methodology for providing electronic devices comprised of semiconductor materials deposited and crystallized using a pulsed laser source on oxide and/or metal layers on polymeric and polymer composite substrates of low coefficient of thermal expansion (CTE). The present invention permits the fabrication of inexpensive yet highly efficient electronic devices, such as photovoltaic cells, on the filled substrates by the use of laser annealing techniques.
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申请公布号 |
US6236061(B1) |
申请公布日期 |
2001.05.22 |
申请号 |
US19990227467 |
申请日期 |
1999.01.08 |
申请人 |
WALPITA LAKSHAMAN MAHINDA |
发明人 |
WALPITA LAKSHAMAN MAHINDA |
分类号 |
H01L21/20;H01L23/498;H01L31/18;H01L33/16;(IPC1-7):H01L29/78;H01L33/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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