发明名称 METHOD OF PRODUCING OXIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To control the crystal form when an oxide single crystal is grown by a floating zone melting method. SOLUTION: In a method of producing an oxide single crystal, which comprises of growing the oxide likely to become a flat form due to the occurrence of crystal habit caused by anisotropy in growing speed or the like by a floating zone melting method, the anisotropic growth speed of the crystal is controlled by non-isotropically heating a melting zone from the opposite angle directions while rotating a raw material rod without rotating a seed crystal. A four ellipse-type infrared ray converging apparatus having two couple of lamps, wherein one couple of lamps is constituted of two lamps, being arranged in the opposite angle directions and capable of independently controlling the output of each lamp is preferably used as the heating device.
申请公布号 JP2001139390(A) 申请公布日期 2001.05.22
申请号 JP19990316071 申请日期 1999.11.05
申请人 JAPAN SCIENCE & TECHNOLOGY CORP 发明人 TANAKA ISAO;WATAUCHI TOSHIJI
分类号 C30B13/00;C30B13/24;C30B13/28;C30B13/30;(IPC1-7):C30B13/00 主分类号 C30B13/00
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