Method and apparatus for growing layer on one surface of wafer

摘要

A method and an apparatus for growing a layer on one surface of a wafer by liquid phase deposition are provided. At first, a first wafer is putted on a first wafer-holder by its first surface. Then, a growth-liquid vessel having a first opening at the bottom is mounted on the first wafer-holder. Thereafter, a growth liquid is poured into the growth-liquid vessel to expose a second surface of the first wafer to the growth liquid for growing the layer on the second surface of the first wafer. Then, the first wafer is taken out from the first wafer-holder to obtain a wafer with a layer grown only on one surface.