发明名称 |
Method for forming flash memory cell |
摘要 |
A method for forming a flash memory cell forms an insulating layer on a provided substrate and a number of openings are formed within the insulating layer to expose the substrate. A patterned conductive layer having a dopant is formed and fills the openings on the substrate. By driving the dopant into the substrate, source/drain regions are formed. A gate structure is formed on a channel region between the source/drain regions to accomplish the flash memory cell.
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申请公布号 |
US6235582(B1) |
申请公布日期 |
2001.05.22 |
申请号 |
US19980223613 |
申请日期 |
1998.12.30 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN HWI-HUANG |
分类号 |
H01L21/336;H01L29/423;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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