发明名称 |
System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation |
摘要 |
A light emitting device and heterojunction phototransistor combination having a structure where a p-type material terminal of a laser is common with an emitter of a PNP heterojunction phototransistor. This configuration results in a light emitting device and heterojunction phototransistor structure that has a drastically reduced bias voltage requirement and that allows independent biasing of the laser and the heterojunction phototransistor.
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申请公布号 |
US6236671(B1) |
申请公布日期 |
2001.05.22 |
申请号 |
US19980183030 |
申请日期 |
1998.10.29 |
申请人 |
AGILENT TECHNOLOGIES, INC. |
发明人 |
BABIC DUBRAVKO I. |
分类号 |
H01S5/183;H01S5/026;(IPC1-7):H01S5/026;H01L33/00 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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