LIQUID FOR POLISHING METAL AND METHOD FOR POLISHING METAL

摘要

PROBLEM TO BE SOLVED: To obtain a metal-polishing liquid which can express a high polishing rate ration (Ta/Cu, TaN/Cu) of tantalum, tantalum nitride and copper, enables high flattening and dishing quantity reduction, and enables the formation of a highly reliable metal film embedded pattern, and to provide a method for polishing with the metal-polishing liquid. SOLUTION: This polishing liquid for metal contains a metal oxide, an aromatic ring-containing monobasic acid and water, has a pH value of <=3, and a metal oxide concentration of 0.01 to 3 wt.%. The method for polishing a film to be polished, comprises supplying the polishing liquid for the metal to the polishing cloth of a polishing board and simultaneously relatively moving the polishing board and a substrate in a state that the substrate having a film to be polished is pressed to the polishing cloth.